UPA863TS transistor equivalent, npn silicon rf transistor.
* Low voltage operation
* 2 different built-in transistors (2SC5436, 2SC5800)
Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = .
fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
* 6-pin super lead-less minimold package
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