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PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µPA800T
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band.
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1 1.25±0.1
FEATURES
• Low Noise
0.65 0.65
1.3
• High Gain |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC4228)
2.0±0.2
2
3
0.7
PART NUMBER
QUANTITY Loose products (50 PCS)
PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape.
µPA800T
PIN CONFIGURATION (Top View)
µPA800T-T1
Taping products (3 KPCS/Reel)
6 Q1
5
0~0.
UPA800T Datasheet
