UPA812T transistor equivalent, high-frequency low noise amplifier npn silicon epitaxial transistor.
* Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
0.65 0.65
* High Gain
1.3
|S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
* A Small Mi.
e or injury to persons or pro.
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