UPA810T Key Features
- SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package
- LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz
- HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz
- EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE
- HIGH COLLECTOR CURRENT: 100 mA
- Part: UPA810T
- Description: NPN SILICON HIGH FREQUENCY TRANSISTOR
- Manufacturer: CEL
- Size: 439.02 KB
Other UPA810T Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
NEC |
UPA810TC | NPN SILICON EPITAXIAL TRANSISTOR |