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UPA2727UT1A - MOS FIELD EFFECT TRANSISTOR

Description

The μ PA2727UT1A is N-channel MOSFET designed for DC/DC converter applications.

Low on-state resistance RDS(on)1 = 9.6 mΩ MAX.

RDS(on)2 = 15 mΩ MAX.

Features

  • 1 8 0.10 S 0.10 M 0 +0.05.

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Datasheet Details

Part number UPA2727UT1A
Manufacturer NEC
File Size 199.04 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet UPA2727UT1A Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2727UT1A SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The μ PA2727UT1A is N-channel MOSFET designed for DC/DC converter applications. PACKAGE DRAWING (Unit: mm) 1.27 • Low on-state resistance RDS(on)1 = 9.6 mΩ MAX. (VGS = 10 V, ID = 8 A) 0.42 −0.05 3 4 +0.1 6 5 6 ±0.2 5.4 ±0.2 RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Low QGD QGD = 3.5 nC TYP. (VDD = 15 V, ID = 16 A) • Thin type surface mount package with heat spreader (8-pin HVSON) • RoHS Compliant 5 ±0.2 0.27 ±0.05 1.0 MAX. 2 7 5.15 ±0.2 FEATURES 1 8 0.10 S 0.10 M 0 +0.05 −0 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.
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