UPA2724UT1A transistor equivalent, mos field effect transistor.
* Low on-state resistance
RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 5.0 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
* Low input capacitance Ciss = 4400 pF TY.
+0.1 C
−0.05
FEATURES
* Low on-state resistance
RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 5.0 mΩ .
PACKAGE DRAWING (Unit: mm)
The μ PA2724UT1A is N-channel MOSFET designed for DC/DC converter applications.
+0.1 C
−0.05
FEATURES
* Low on-state resistance
RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 5.0 mΩ MAX. (VGS = 4.5 V, ID .
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