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UPA2724UT1A Datasheet, NEC

UPA2724UT1A transistor equivalent, mos field effect transistor.

UPA2724UT1A Avg. rating / M : 1.0 rating-12

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UPA2724UT1A Datasheet

Features and benefits


* Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 5.0 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
* Low input capacitance Ciss = 4400 pF TY.

Application

+0.1 C −0.05 FEATURES
* Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 5.0 mΩ .

Description

PACKAGE DRAWING (Unit: mm) The μ PA2724UT1A is N-channel MOSFET designed for DC/DC converter applications. +0.1 C −0.05 FEATURES
* Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 5.0 mΩ MAX. (VGS = 4.5 V, ID .

Image gallery

UPA2724UT1A Page 1 UPA2724UT1A Page 2 UPA2724UT1A Page 3

TAGS

UPA2724UT1A
MOS
FIELD
EFFECT
TRANSISTOR
UPA2726UT1A
UPA2727UT1A
UPA2700GR
NEC

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