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UPA1706 - N-Channel Power MOSFET

General Description

This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.

Key Features

  • Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP. ) (VGS = 10 V, ID = 7.0 A) 1.44 1 5.37 MAX. +0.10.
  • 0.05 4 6.0 ±0.3 4.4 0.8 RDS(on)2 = 7.0 mΩ (TYP. ) (VGS = 4.5 V, ID = 7.0 A) RDS(on)3 = 8.0 mΩ (TYP. ) (VGS = 4.0 V, ID = 7.0 A).
  • Low Ciss : Ciss = 3000 pF (TYP. ).
  • Built-in G-S protection diode.
  • Small and surface mount package (Power SOP8) 1.8 MAX. 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10.
  • 0.05 0.12 M.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1706 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. 8 PACKAGE DRAWING (Unit : mm) 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES • Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A) 1.44 1 5.37 MAX. +0.10 –0.05 4 6.0 ±0.3 4.4 0.8 RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V, ID = 7.0 A) RDS(on)3 = 8.0 mΩ (TYP.) (VGS = 4.0 V, ID = 7.0 A) • Low Ciss : Ciss = 3000 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 1.8 MAX. 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.