UPA1706 Datasheet | NEC

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook puters. PACKAGE DRAWING (Unit : mm) 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES - Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A) 1 5.37 MAX. +0.10 - 0.05 6.0 ±0.3 4.4 0.8 RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V, ID = 7.0 A) RDS(on)3 = 8.0 mΩ (TYP.) (VGS = 4.0 V, ID = 7.0 A) - Low Ciss : Ciss = 3000 p F (TYP.) - Built-in G-S protection diode - Small and surface mount package (Power SOP8) 1.8 MAX. 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 - 0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 µPA1706G EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note3 Note4 Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 30 ±20 ±13 ±52 2.0 150 - 55 to + 150 V V A A W °C °C Gate Drain Body Diode Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Notes 1. VGS = 0 V 2. VDS = 0 V Gate Protection...