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UPA1705 - N-Channel Power MOSFET

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General Description

This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers.

PACKAGE DRAWING (Unit : mm) 8 5 1, 2, 3 ;

Source 4 ;

Overview

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1705 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL.

Key Features

  • Super low on-state resistance 1.44 RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A) 1.8 Max. 1 5.37 Max. 4 6.0 ±0.3 4.4 +0.10.
  • 0.05 0.8 RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID = 4.0 A).
  • Low Ciss : Ciss = 750 pF TYP.
  • Built-in G-S protection diode.
  • Small and surface mount package (Power SOP8) 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.10.
  • 0.05.

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