UPA1703
Overview
This product is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers. 8 5 PACKAGE DIMENSIONS (in millimeter).
- Super Low On-Resistance RDS(on)1 = 10.5 mΩ RDS(on)2 = 17 mΩ
- Low Ciss MAX. (VGS = 10 V, ID = 5.0 A) MAX. (VGS = 4 V, ID = 5.0 A) 1 4 5.37 MAX. +0.10 -0.05 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain Ciss = 2180 pF TYP.
- 44 1.8 MAX.
- 0 ±0.3 4.4 0.8
- Built-in G-S Protection Diode
- Small and Surface Mount Package (Power SOP8)
- 05 MIN.
- 5 ±0.2 0.10
- 27 0.78 MAX. 0.40 +0.10 -0.05
