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UPA1703 - SWITCHING N-CHANNEL POWER MOSFET

Description

This product is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers.

Features

  • Super Low On-Resistance RDS(on)1 = 10.5 mΩ RDS(on)2 = 17 mΩ.
  • Low Ciss MAX. (VGS = 10 V, ID = 5.0 A) MAX. (VGS = 4 V, ID = 5.0 A) 1 4 5.37 MAX. +0.10.
  • 0.05 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain Ciss = 2180 pF TYP. 1.44 1.8 MAX. 6.0 ±0.3 4.4 0.8.
  • Built-in G-S Protection Diode.
  • Small and Surface Mount Package (Power SOP8) 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10.
  • 0.05 0.12 M.

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Datasheet Details

Part number UPA1703
Manufacturer NEC
File Size 62.95 KB
Description SWITCHING N-CHANNEL POWER MOSFET
Datasheet download datasheet UPA1703 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µPA1703 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers. 8 5 PACKAGE DIMENSIONS (in millimeter) FEATURES • Super Low On-Resistance RDS(on)1 = 10.5 mΩ RDS(on)2 = 17 mΩ • Low Ciss MAX. (VGS = 10 V, ID = 5.0 A) MAX. (VGS = 4 V, ID = 5.0 A) 1 4 5.37 MAX. +0.10 –0.05 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain Ciss = 2180 pF TYP. 1.44 1.8 MAX. 6.0 ±0.3 4.4 0.8 • Built-in G-S Protection Diode • Small and Surface Mount Package (Power SOP8) 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.
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