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UPA1701A - SWITCHING N-CHANNEL POWER MOSFET

Description

This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application.

Features

  • 2.5 V gate drive and low on-resistance RDS(on)1 = 27 mΩ (MAX. ) (VGS = 4.0 V, ID = 3.5 A) 1.44 RDS(on)2 = 40 mΩ (MAX. ) (VGS = 2.5 V, ID = 3.5 A).
  • Low Ciss : Ciss = 1040 pF (TYP. ).
  • Built-in G-S protection diode.
  • Small and surface mount package (Power SOP8) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10.
  • 0.05 0.8 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10.
  • 0.05 0.12 M.

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Datasheet Details

Part number UPA1701A
Manufacturer NEC
File Size 60.45 KB
Description SWITCHING N-CHANNEL POWER MOSFET
Datasheet download datasheet UPA1701A Datasheet

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1701A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES • 2.5 V gate drive and low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A) 1.44 RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A) • Low Ciss : Ciss = 1040 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10 –0.05 0.8 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.
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