UPA1701A
Description
This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application.
Key Features
- 2.5 V gate drive and low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A)
- Low Ciss : Ciss = 1040 pF (TYP.)
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)
