UPA1701A Datasheet | NEC

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. PACKAGE DRAWING (Unit : mm) 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES - 2.5 V gate drive and low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A) - Low Ciss : Ciss = 1040 p F (TYP.) - Built-in G-S protection diode - Small and surface mount package (Power SOP8) 1.8 MAX. 1 5.37 MAX. 6.0 ±0.3 4.4 +0.10 - 0.05 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 - 0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 µPA1701AG EQUIVARENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 Drain VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 30 ±12 ±7.0 ±28 2.0 150 - 55 to + 150 V V A A W °C °C Gate Protection Diode Source Gate Body Diode Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on ceramic substrate of 1200 mm x 1.7mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this...