UPA1701A
Overview
This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain.
- 2.5 V gate drive and low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A)
- 44 RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A)
- Low Ciss : Ciss = 1040 pF (TYP.)
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)
- 8 MAX. 1 5.37 MAX. 4
- 0 ±0.3 4.4 +0.10 -0.05
- 05 MIN.
- 5 ±0.2 0.10
- 27 0.78 MAX. 0.40 +0.10 -0.05
