UPA1701A Overview
Description
This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain.
Key Features
- Low Ciss : Ciss = 1040 pF (TYP.)
- Built-in G-S protection diode
