• 2.5 V gate drive and low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A)
1.44
RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A)
• Low Ciss : Ciss = 1040 pF (TYP.)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
1.8 MAX.
1 5.37 MAX.
4
6.0 ±0.3 4.4
.