NP34N055IHE Features
* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on) = 19 m Ω MAX. (VGS = 10 V, I D = 17 A)
* Low Ciss : Ciss = 1600 pF TYP.
* Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Drain to Source Voltage Gate to Source Volta
NP34N055IHE, NP34N055HHE Datasheet
Datasheet Details
NP34N055IHE, NP34N055HHE
NEC
260.05 KB
N-channel power mosfet.
This datasheet PDF includes multiple part numbers: NP34N055IHE, NP34N055HHE.
Please refer to the document for exact specifications by model.
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NP34N055IHE Distributor
