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K3483 - 2SK3483

General Description

The 2SK3483 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low on-state resistance RDS(on)1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A) RDS(on)2 = 59 mΩ MAX. (VGS = 4.5 V, ID = 14 A).
  • Low Ciss: Ciss = 2300 pF TYP.
  • Built-in gate protection diode.
  • TO-251/TO-252 package (TO-251).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3483 SWITCHING N-CHANNEL POWER MOS FET www.DataSheet4U.com DESCRIPTION The 2SK3483 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3483 2SK3483-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES • Low on-state resistance RDS(on)1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A) RDS(on)2 = 59 mΩ MAX. (VGS = 4.5 V, ID = 14 A) • Low Ciss: Ciss = 2300 pF TYP. • Built-in gate protection diode • TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0V) Gate to Source Voltage (VDS = 0V) Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 100 ±20 ±28 ±60 40 1.0 150 –55 to +150 25 62.