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K3480 - 2SK3480

General Description

The 2SK3480 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 25 A).
  • Low Ciss: Ciss = 3600 pF TYP.
  • Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220AB).

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Full PDF Text Transcription for K3480 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K3480. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT www.DataSheet4U.com TRANSISTOR 2SK3480 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3480 is N-channel MOS Field Effect Transistor desi...

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DESCRIPTION The 2SK3480 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3480 2SK3480-S 2SK3480-ZJ 2SK3480-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote FEATURES • Super low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 25 A) • Low Ciss: Ciss = 3600 pF TYP. • Built-in gate protection diode Note TO-220SMD package is produced only in Japan.

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