* Low on-resistance RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A) RDS(on)3 = 29 mΩ (MAX.) (VGS = 4.0 V, ID = 15 A) .

of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device befor.

The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES
* Low on-resistance RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A) RD.

K3362-01

K3362TC360

K3362TC380

K3362TC400

K3362TC420

K3362TD360

K3362TD380

K3362TD400

K3362TD420

K3362TT360

K3362TT380

K3362TT400

K3362TT420

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