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2SK3362-01 FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB SERIES
Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof
Applications Switching regulators DC-DC converters General purpose power amplifier
Outline Drawings
TO-220AB
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Maximum avalanche energy Maximum power dissipation Operating and storage temperature range
Symbol VDS ID ID[puls] VGS EAV PD Tch Tstg
Rating 60
Unit Remarks V
±50 A
±200
A
±20 V
867 mJ *1
80 W
+150 -55 to +150
°C °C
*1 L=0.
K3362-01 Datasheet
