J449 mosfet equivalent, p-channel power mosfet.
* Low On-Resistance
RDS(on) = 0.8 Ω MAX. (@ VGS =
–10 V, ID =
–3.0 A)
15.0 ±0.3 12.0 ±0.2 13.5 MIN.
* Low Ciss Ciss = 1040 pF TY.
PACKAGE DIMENSIONS
(in millimeters) 10.0 ±0.3 3.2 ±0.2 4.5 ±0.2 2.7 ±0.2
FEATURES
* Low On-Resistance
RDS(on) = 0.
The 2SJ449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS
(in millimeters) 10.0 ±0.3 3.2 ±0.2 4.5 ±0.2 2.7 ±0.2
FEATURES
* Low On-Resistance
RDS(on) = 0.8 Ω MAX. (@ VGS =
.
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