C3587 Datasheet PDF ( 2SC3587) | Download NEC (now Renesas Electronics) C3587

Part number	C3587
Manufacturer	NEC (now Renesas Electronics)
File Size	109.88 KB
Description	2SC3587
Datasheet	C3587 Datasheet

Overview

DATA SHEET www.DataSheet4U.com SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz.

This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

PACKAGE DIMENSIONS (in mm) E 3.8 MIN.

Key Features

Low noise : NF = 1.7 dB TYP. @ f = 2 GHz C 3.8 MIN. 3.8 MIN. B NF = 2.6 dB TYP. @ f = 4 GHz.
High power gain : GA = 12.5 dB TYP. @ f = 2 GHz GA = 8.0 dB TYP. @ f = 4 GHz 3.8 MIN. 45 °.

Part Number	Description
C358C	UPC358
C3568	2SC3568
C3570	2SC3570

C3587 - 2SC3587

Datasheet Details

Overview

Key Features

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