C3587 Description
SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. PACKAGE DIMENSIONS (in mm) E 3.8 MIN.
C3587 Key Features
- Low noise : NF = 1.7 dB TYP. @ f = 2 GHz
- High power gain : GA = 12.5 dB TYP. @ f = 2 GHz GA = 8.0 dB TYP. @ f = 4 GHz