2SJ132 transistors equivalent, mos field effect power transistors.
* Gate drive available at logic level (VGS = −4 V)
* High current control available in small
dimension due to low RDS(on) (≅ 0.25 Ω)
* 2SJ132-Z is a lead proc.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Conditions
Drain to source voltage
VDSS
VGS = 0
Gate to s.
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