2SJ132-Z transistors equivalent, mos field effect power transistors.
* Gate drive available at logic level (VGS = −4 V)
* High current control available in small
dimension due to low RDS(on) (≅ 0.25 Ω)
* 2SJ132-Z is a lead proc.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Conditions
Drain to source voltage
VDSS
VGS = 0
Gate to s.
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of c.
Image gallery
TAGS
Download (Size : 130.29KB)