NCEP8818AS datasheet, mosfet equivalent, NCE Power Semiconductor

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Features and benefits

* VDS =88V,ID =18A RDS(ON)=6.1mΩ (typical) @ VGS=10V RDS(ON)=7.1mΩ (typical) @ VGS=4.5V Schematic diagram
* Excellent gate charge x RDS(on) product(FOM)
* V.

Description

The NCEP8818AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg..

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