NCEP85T11 mosfet equivalent, n-channel super trench power mosfet.
* VDS =85V,ID =110A RDS(ON) <6mΩ @ VGS=10V
Schematic diagram
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C op.
The NCEP85T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 388.32KB)