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NCEP40T12GU - N-Channel Super Trench Power MOSFET

Description

The NCEP40T12GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =40V,ID =120A RDS(ON)=2.05mΩ (typical) @ VGS=10V RDS(ON)=3.1mΩ (typical) @ VGS=4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating ly 100% UIS TESTED! On100% ∆Vds TESTED! DFN 5X6 Use times Top View Bottom View Schematic Diagram heng Package Marking and Ordering Information s Device Marking Device Device Package g P40T12GU NCEP40T12GU DFN5X6-8L Reel Size - Tape width -.

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Datasheet Details

Part number NCEP40T12GU
Manufacturer NCE Power Semiconductor
File Size 325.63 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP40T12GU Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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http://www.ncepower.com NCEP40T12GU NCE N-Channel Super Trench Power MOSFET Description The NCEP40T12GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features ● VDS =40V,ID =120A RDS(ON)=2.05mΩ (typical) @ VGS=10V RDS(ON)=3.1mΩ (typical) @ VGS=4.
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