Datasheet Details
| Part number | NCE80T900K |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 477.22 KB |
| Description | N-Channel Super Junction Power MOSFET |
| Datasheet |
 NCE80T900K Datasheet
|
|
|
General Description
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.
This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Key Features
- New technology for high voltage device.
- Low on-resistance and low conduction losses.
- Small package.
- Ultra Low Gate Charge cause lower driving requirements.
- 100% Avalanche Tested.
- ROHS compliant VDS RDS(ON)MAX ID 800 900 6 V mΩ A.