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NCE80T900F - N-Channel Super Junction Power MOSFET

This page provides the datasheet information for the NCE80T900F, a member of the NCE80T900D N-Channel Super Junction Power MOSFET family.

Datasheet Summary

Description

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.

This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

Features

  • New technology for high voltage device.
  • Low on-resistance and low conduction losses.
  • small package.
  • Ultra Low Gate Charge cause lower driving requirements.
  • 100% Avalanche Tested.
  • ROHS compliant VDS RDS(ON)MAX ID 800 900 6 V mΩ A.

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Datasheet preview – NCE80T900F

Datasheet Details

Part number NCE80T900F
Manufacturer NCE Power Semiconductor
File Size 600.39 KB
Description N-Channel Super Junction Power MOSFET
Datasheet download datasheet NCE80T900F Datasheet
Additional preview pages of the NCE80T900F datasheet.

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Full PDF Text Transcription

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NCE80T900D,NCE80T900,NCE80T900F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
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