NCE7190H mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 71V,ID =90A RDS(ON) < 6.8mΩ @ VGS=10V
(Typ:5.9mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdso.
General Features
* VDS = 71V,ID =90A RDS(ON) < 6.8mΩ @ VGS=10V
(Typ:5.9mΩ)
* Special process technology for .
The NCE7190H uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 71V,ID =90A RDS(ON) < 6.8mΩ @ VGS=10V
(Typ:5.9mΩ)
* Speci.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 334.87KB)