NCE7190 mosfet equivalent, n-channel enhancement mode power mosfet.
* V DS = 71V,ID =90A RDS(ON) < 6.8mΩ @ VGS=10V ( Typ:5.9mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdso.
General Features
* V DS = 71V,ID =90A RDS(ON) < 6.8mΩ @ VGS=10V ( Typ:5.9mΩ)
* Special process technology for .
The NCE719 0 uses adv anced trenc h techno logy and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* V DS = 71V,ID =90A RDS(ON) < 6.8mΩ @ VGS=10V ( Typ:5.9mΩ)
* S.
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