NCE60H10A mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =60V,ID =100A RDS(ON) < 5.5 mΩ @ VGS=10V
(Typ:4.8mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and curren.
General Features
* VDS =60V,ID =100A RDS(ON) < 5.5 mΩ @ VGS=10V
(Typ:4.8mΩ)
* High density cell design for u.
The NCE60H10A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
General Features
* VDS =60V,ID =100A RDS(ON) < 5.
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