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NCE60H10A Datasheet, NCE Power Semiconductor

NCE60H10A mosfet equivalent, n-channel enhancement mode power mosfet.

NCE60H10A Avg. rating / M : 1.0 rating-12

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NCE60H10A Datasheet

Features and benefits


* VDS =60V,ID =100A RDS(ON) < 5.5 mΩ @ VGS=10V (Typ:4.8mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and curren.

Application

General Features
* VDS =60V,ID =100A RDS(ON) < 5.5 mΩ @ VGS=10V (Typ:4.8mΩ)
* High density cell design for u.

Description

The NCE60H10A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features
* VDS =60V,ID =100A RDS(ON) < 5.

Image gallery

NCE60H10A Page 1 NCE60H10A Page 2 NCE60H10A Page 3

TAGS

NCE60H10A
N-Channel
Enhancement
Mode
Power
MOSFET
NCE Power Semiconductor

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