NCE60H21 mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDS =60V ,ID =210A RDS(ON) < 4mΩ @ VGS=10V
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and cu.
GENERAL FEATURES
* VDS =60V ,ID =210A RDS(ON) < 4mΩ @ VGS=10V
Schematic diagram
* High density cell design f.
The NCE60H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
* VDS =60V ,ID =210A RDS(ON) < 4mΩ @ VGS=10V
Schematic diagram
* .
Image gallery
TAGS
Download (Size : 382.72KB)