NCE40P13S mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-40V,ID =-13A RDS(ON) <15mΩ @ VGS=-10V RDS(ON) <18mΩ @ VGS=-4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage.
General Features
* VDS =-40V,ID =-13A RDS(ON) <15mΩ @ VGS=-10V RDS(ON) <18mΩ @ VGS=-4.5V
* High density cell d.
The NCE40P13S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =-40V,ID =-13A RDS(ON) <15mΩ @ VGS=-10V RDS(ON) <18mΩ @ VGS=-4.5.
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