NCE40P05Y mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-40V,ID =-5.3A RDS(ON) <85mΩ @ VGS=-10V RDS(ON) <120mΩ @ VGS=-4.5V
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S Schematic diagram
* High density cell design for ultra low Rdson
* Fully cha.
General Features
* VDS =-40V,ID =-5.3A RDS(ON) <85mΩ @ VGS=-10V RDS(ON) <120mΩ @ VGS=-4.5V
D G
S Schematic diagram.
The NCE40P05Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =-40V,ID =-5.3A RDS(ON) <85mΩ @ VGS=-10V RDS(ON) <120mΩ @ VGS=-4..
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