NCE40H20 mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDS = 40V,ID =200A RDS(ON) < 4mΩ @ VGS=10V
(Typ:3.3mΩ)
Schematic diagram
* Special process technology for high ESD capability
* High density cell design .
General Features
* VDS = 40V,ID =200A RDS(ON) < 4mΩ @ VGS=10V
(Typ:3.3mΩ)
Schematic diagram
* Special proce.
The NCE40H20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 40V,ID =200A RDS(ON) < 4mΩ @ VGS=10V
(Typ:3.3mΩ)
Schematic di.
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