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NCE40H29D - N-Channel Enhancement Mode Power MOSFET

Description

The NCE40H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =40V ,ID =290A RDS(ON) < 2.4mΩ @ VGS=10V Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet Details

Part number NCE40H29D
Manufacturer NCE Power Semiconductor
File Size 398.03 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE40H29D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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http://www.ncepower.com Pb Free Product NCE40H29D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V ,ID =290A RDS(ON) < 2.
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