NCE3416 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 20V,ID =6.5A RDS(ON) <40mΩ @ VGS=1.8V RDS(ON) <33mΩ @ VGS=2.5V RDS(ON) <27mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability .
.It is ESD protested.
General Features
* VDS = 20V,ID =6.5A RDS(ON) <40mΩ @ VGS=1.8V RDS(ON) <33mΩ @ VGS=2.5V RDS(O.
The NCE3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Features.
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