NCE3400AY mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 30V,ID = 5.8A RDS(ON) < 55mΩ @ VGS=2.5V RDS(ON) < 42mΩ @ VGS=4.5V RDS(ON) < 40mΩ @ VGS=10V
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S Schematic diagram
* High power and current handing capa.
* Load switch
* Power management
SOT23-3L top view
Package Marking and Ordering Information
Device Marking
D.
The NCE3400AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
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