NCE20N65T mosfet equivalent, n-channel super junction power mosfet.
*New technology for high voltage device
*Low on-resistance and low conduction losses
*Ultra Low Gate Charge cause lower driving requirements
*100% Avalanc.
VDS RDS(ON) ID
650 190 20
V mΩ A
Features
*New technology for high voltage device
*Low on-resistance and lo.
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap.
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