NCE20N60T mosfet equivalent, n-channel super junction power mosfet.
*New technology for high voltage device
*Low on-resistance and low conduction losses
*Ultra Low Gate Charge cause lower driving requirements
*100% Avalanc.
VDS@Tjmax
650
V
RDS(ON)
190 mΩ
ID 20 A
Features
*New technology for high voltage device
*Low on-resistan.
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap.
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