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NCE2014ES - N-Channel Enhancement Mode Power MOSFET

Description

The NCE2014ES uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =20V,ID =14A RDS(ON).

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Datasheet Details

Part number NCE2014ES
Manufacturer NCE Power Semiconductor
File Size 378.57 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE2014ES Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE2014ES NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2014ES uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.
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