NCE15P25JK mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-150V,ID =-25A RDS(ON) <135mΩ @ VGS=-10V (Typ.=120mR) RDS(ON) <160mΩ @ VGS=-4.5V (Typ.=131mR)
* Super high dense cell design
* Advanced trench process .
General Features
* VDS =-150V,ID =-25A RDS(ON) <135mΩ @ VGS=-10V (Typ.=120mR) RDS(ON) <160mΩ @ VGS=-4.5V (Typ.=131.
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