NCE15P25 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-150V,ID =-25A RDS(ON) <140mΩ @ VGS=-10V
* Super high dense cell design
* Advanced trench process technology
* Reliable and rugged
* High densi.
General Features
* VDS =-150V,ID =-25A RDS(ON) <140mΩ @ VGS=-10V
* Super high dense cell design
* Advanced.
The NCE15P25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =-150V,ID =-25A RDS(ON) <140mΩ @ VGS=-10V
* Super high dense .
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