NCE1579C mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =150V,ID =79A RDS(ON) < 13mΩ @ VGS=10V (Typ:11mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
General Features
* VDS =150V,ID =79A RDS(ON) < 13mΩ @ VGS=10V (Typ:11mΩ)
* High density cell design for ultra .
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