NCE1579C mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =150V,ID =79A RDS(ON) < 13mΩ @ VGS=10V (Typ:11mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
General Features
* VDS =150V,ID =79A RDS(ON) < 13mΩ @ VGS=10V (Typ:11mΩ)
* High density cell design for ultra .
The NCE1579C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =150V,ID =79A RDS(ON) < 13mΩ @ VGS=10V (Typ:11mΩ)
* High dens.
Image gallery
TAGS
Download (Size : 332.39KB)