NCE1570 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =150V,ID =70A RDS(ON) <18mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stab.
General Features
* VDS =150V,ID =70A RDS(ON) <18mΩ @ VGS=10V
* High density cell design for ultra low Rdson
The NCE1570 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =150V,ID =70A RDS(ON) <18mΩ @ VGS=10V
* High density cell desi.
Image gallery
TAGS
Download (Size : 362.05KB)