NCE01P18K mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) RDS(ON) <120mΩ @ VGS=-10V (Typ:95mΩ)
* Super high dense cell design
* Advanced trench process techn.
It is ESD protested.
General Features
* VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) RDS(ON) <120mΩ @ .
The NCE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
General Features
* VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (.
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