NCE01P03S mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-100V,ID =-3A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ) RDS(ON) <230mΩ @ VGS=-4.5V (Typ:200mΩ)
* Super high dense cell design
* Advanced trench process tec.
It is ESD protested.
General Features
* VDS =-100V,ID =-3A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ) RDS(ON) <230mΩ @ .
The NCE01P03S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
General Features
* VDS =-100V,ID =-3A RDS(ON) <200mΩ @ VGS=-10V (T.
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