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NCE01H14C - N-Channel Enhancement Mode Power MOSFET

Description

The NCE01H14C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =100V,ID =140A RDS(ON) < 6.0mΩ @ VGS=10V (Typ:5.0mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram.

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Datasheet Details

Part number NCE01H14C
Manufacturer NCE Power Semiconductor
File Size 339.36 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE01H14C Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H14C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Pb Free Product NCE01H14C General Features ● VDS =100V,ID =140A RDS(ON) < 6.0mΩ @ VGS=10V (Typ:5.
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