NCE01H14C mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =100V,ID =140A RDS(ON) < 6.0mΩ @ VGS=10V
(Typ:5.0mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and curren.
Pb Free Product
NCE01H14C
General Features
* VDS =100V,ID =140A RDS(ON) < 6.0mΩ @ VGS=10V
(Typ:5.0mΩ)
* Hig.
The NCE01H14C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Pb Free Product
NCE01H14C
General Features
* VDS =100V,ID =140A RDS(ON) < 6.0mΩ @ VGS=.
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