NCE0160G mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDS = 100V,ID =60A RDS(ON) <16mΩ @ VGS=12.6V
Schematic diagram
* Special designed for convertors and power controls
* High density cell design for ultra l.
General Features
* VDS = 100V,ID =60A RDS(ON) <16mΩ @ VGS=12.6V
Schematic diagram
* Special designed for con.
The NCE0160G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
General Features
* VDS = 100V,ID =60A RDS(ON) <16.
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