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NCE0157T - N-Channel Enhancement Mode Power MOSFET

Description

The NCE0157T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V (Typ:11.7mΩ).
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation Schematic diagram.

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Datasheet Details

Part number NCE0157T
Manufacturer NCE Power Semiconductor
File Size 340.42 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE0157T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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http://www.ncepower.com Pb Free Product NCE0157T NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE0157T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V (Typ:11.
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