NCE0157T mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V
(Typ:11.7mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rds.
GENERAL FEATURES
* VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V
(Typ:11.7mΩ)
* Special process technology for.
The NCE0157T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
* VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V
(Typ:11.7mΩ)
* Spec.
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