NCE0157A2 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 100V,ID =57A RDS(ON) < 17.5mΩ @ VGS=10V
(Typ:14.5mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low R.
General Features
* VDS = 100V,ID =57A RDS(ON) < 17.5mΩ @ VGS=10V
(Typ:14.5mΩ)
* Special process technology f.
The NCE0157A2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 100V,ID =57A RDS(ON) < 17.5mΩ @ VGS=10V
(Typ:14.5mΩ)
* S.
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