NCE0117 mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ)
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
GENERAL FEATURES
* VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ)
* High density cell design for ultra .
The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
* VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ)
* High densi.
Image gallery
TAGS
Download (Size : 381.20KB)