NCE0110AK mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =100V,ID =10A RDS(ON) < 130mΩ @ VGS=10V (Typ:95mΩ) RDS(ON) < 140mΩ @ VGS=4.5V (Typ:100mΩ)
* High density cell design for ultra low Rdson
* Fully charact.
General Features
* VDS =100V,ID =10A RDS(ON) < 130mΩ @ VGS=10V (Typ:95mΩ) RDS(ON) < 140mΩ @ VGS=4.5V (Typ:100mΩ)
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The NCE0110AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =100V,ID =10A RDS(ON) < 130mΩ @ VGS=10V (Typ:95mΩ) RDS(ON) < 140.
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