NCE55P30 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good st.
General Features
* VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V
* High density cell design for ultra low Rdson .
The NCE55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V
* High density cell d.
Image gallery
TAGS
Download (Size : 288.22KB)